Analytical study of effect of energy band parameters and lattice temperature on conduction band offset in AlN/Ga2O3 HEMT

Apart from other factors, band alignment led conduction offset (CBO) largely affects the two dimensional electron gas (2DEG) density ns in wide bandgap semiconductor based high mobility transistors (HEMTs). In context of assessing various performance metrics HEMTs, rational estimation CBO and maximum achievable 2DEG is critical. Here, we present an analytical study on effect different energy parameters-energy affinity heterostructure constituents, lattice temperature estimated quantum triangular-well. It found that at thermal equilibrium, increases linearly with ?EC a fixed Schottky barrier potential, but decreases increasing gate-metal work function even ?EC, due to increased heights. Furthermore, it also observed poor conductivity higher which results lower bandgap, hence output currents.